To integrate such PIN photodetectors into the silicon photonics platform, the hetero-epitaxial germanium (Ge) is generally considered to be the ideal intrinsic region material as it has strong absorption in the
Read MoreHere, the authors demonstrate an ultra-high extinction ratio electro-optical modulator on silicon and its application for DAS.
Read MoreWe report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 µm2 giving an extinction ratio of ∼10 dB for a wavelength range of 1580 –
Read MoreSilicon Mach-Zehnder modulators with reduced series resistance in lateral PN junction rib-waveguide phase shifters for enhanced high-speed
Read MoreGermanium-based waveguide electro-absorption modulators are reported in C- and L-band wavelength operation at 56Gb/s (NRZ-OOK) with extinction ratio of >3dB at 2V peak-to-peak and insertion loss
Read MoreExplore the differences between static and dynamic extinction ratios in Ge electro-absorption modulators (EAMs). Learn how optical input power and self-heating
Read MoreHybrid Silicon and Lithium Niobate Modulator Shihao Sun, Mingbo He, Mengyue Xu, Shengqian Gao, Siyuan Y u, and Xinlun Cai (Invited P aper)
Read MoreWe compare dynamic and static extinction ratios of germanium electro-absorption modulators (EAM) and their dependency on optical power. We discuss that the common figure of merit, the quotient of
Read MoreDesign of slow-light silicon modulator with ultrahigh bandwidth and compact size. (A) The detailed device geometry and doping configuration of the
Read MoreIn this document, we will describe the procedure for determining the modulation response using the effective index of the waveguide. The effective index can be
Read MoreA wafer-scale analysis of static insertion loss (IL) and extinction ratio (ER) is presented, showing IL down to 7.5 dB with ER of 5 dB for a 36.8 μm long device, at drive voltages of 2 V peak-to-peak.
Read MoreIn particular, they are required for the control and manipulation of atomic systems such as atomic clocks and quantum computers. Typical integrated electro-optic modulators operating at
Read MoreIn this paper, the transfer characteristics of a germanium doped silicon Mach-Zehnder modulator (MZM) have been plotted and compared with a silicon MZM. The germanium doped silicon MZM can
Read MoreAn electro-absorption (EA) modulator holds distinct advantages over the silicon Mach-Zehnder interferometer (MZI) modulator by having lower energy consumption, a smaller footprint on
Read MoreHome » Press Releases OpenLight and Tower Semiconductor Demonstrate 400G/lane Modulators Built on Silicon Photonic Wafers for Data
Read MoreAn integrated silicon photonic MZM modulator with a slow-wave architecture to reduce VπL is presented. This structure achieves an 80% enhancement in extinction ratio and has a 14GHz
Read MoreWe demonstrate a scalable C-band silicon photonic platform monolithically integrating ultra-high speed germanium–silicon electro absorption modulators and fin photodiodes.
Read MoreCompact, High Extinction Ratio Silicon Mach-Zehnder Modulator with Corrugated Waveguides Reza Hosseini1*, Aroutin Khachaturian2, Mircea Cătuneanu1, Parham Porsandeh Khial2, Reza Fatemi2,
Read MoreExperimental results of a high-speed silicon optical modulator based on carrier depletion in a pipin diode and Germanium photodetectors are presented. 10 Gbit/s data transmission is obtained
Read MoreWe have found that the extinction ratio (ER) of an electroabsorption modulator integrated with a distributed feedback laser strongly depends on the incident power to the modulator.
Read MoreWe present the design and fabrication of a waveguide-based Ge electro-absorption (EA) modulator integrated with a 3 µm silicon-on-isolator (SOI) waveguide. The
Read MoreIntroductionGermanium electro-absorption modulators (Ge EAMs) are promising candidates for energy-efficient and high-speed optical transmitters in silicon
Read MoreSilicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that
Read MoreThe optimum extinction ratio (ER) undergoes a red shift and is preserved at higher temperatures. The self-heating of the device due to optical absorption is assessed using finite element (FE) simulations,
Read MoreUsing a PCM with higher refractive index change upon phase-transition and lower extinction coefficient can increase the turnability of the designed filter. However, this would decrease
Read MoreHighlights • The paper introduced a novel design of a graphene ring modulator that balances the trade off between extinction ratio and bandwidth. • The research demonstrates that the
Read MoreWe performed a detailed reliability study of GeSi Electro-Absorption Modulators integrated in a silicon photonics platform using a wide range of stress and performance parameters.
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